STPS40170CW View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS40170CW Datasheet PDF : 8 Pages
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STPS40170C
Table 3: Absolute Ratings (limiting values, per diode)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) RMS forward current
IF(AV) Average forward current Tc = 150 °C δ = 0.5
Per diode
Per device
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
PARM Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
Tstg Storage temperature range
Tj Maximum operating junction temperature *
dV/dt Critical rate of rise of reverse voltage
*
:
d----P-----t--o----t
dTj
<
-R----t--h----(-1--j--–-----a----)
thermal
runaway
condition
for
a
diode
on
its
own
heatsink
Value
170
60
20
40
250
14100
-65 to + 175
175
10000
Unit
V
A
A
A
W
°C
°C
V/µs
Table 4: Thermal Parameters
Symbol
Parameter
Rth(j-c) Junction to case
Rth(c)
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Per diode
Total
Coupling
Value
1.2
0.85
0.5
Unit
°C/W
Table 5: Static Electrical Characteristics (per diode)
Symbol
Parameter
Tests conditions
IR *
Tj = 25 °C
Reverse leakage current
Tj = 125 °C
VR = VRRM
VF ** Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
IF = 20A
IF = 40A
Min. Typ
7
0.69
0.79
Pulse test:
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.64 x IF(AV) + 0.055 IF2(RMS)
Max.
30
30
0.92
0.75
1.00
0.86
Unit
µA
mA
V
2/8
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