STPS40100C2FSYHR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS40100C2FSYHR Datasheet PDF : 9 Pages
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STPS40100HR
Characteristics
Table 4.
Symbol
s
Electrical measurements at ambiant temperature (per diode), Tamb = 22 ±3 °C
Characteristic
MIL-STD-750
test method
Test conditions
Values
Min. Max.
Units
IR1
IR2
VF1(1)
Reverse current
4016
DC method, VR = 100 V
DC method, VR = 50 V
Pulse method, IF = 5 A
-
30
µA
-
5
µA
-
610 mV
VF2(1)
VF3(1)
Forward voltage
4011
Pulse method, IF = 10 A
Pulse method, IF = 20 A
-
730 mV
-
900 mV
C Capacitance
4001
VR = 10 V, F = 1 MHz
-
1
nF
Zth(j-c)(2)
Relative thermal impedance,
junction to case
3101
IH = 15 to 40 A, tH = 50 ms
IM = 50 mA, tmd = 100 µs
Calculate ΔVF(3) °C/W
1. Pulse width ≤ 300µs, duty cycle ≤ 2%
2. Performed only during screening tests parameter drift values (initial measurements for HTRB), go-no-go.
3. The limits for ΔVF shall be defined by the manufacturer on every lot in accordance with MIL-STD-750 Method 3101 and
shall guarantee the Rth(j-c) limits specified in maximum ratings.
Table 5. Electrical measurements at high and low temperatures (per diode)
Symbol
Characteristic
MIL-STD-750
test method
Test conditions(1)
Values
Min. Max.
Units
IR1
Reverse current
IR2
4016
Tcase = +125 (+0, -5) °C
DC method, VR = 100 V
Tcase = +125 (+0, -5) °C
DC method, VR = 50 V
-
20
mA
-
7.5 mA
VF2(2)
Tcase = +125 (+0, -5) °C
pulse method, IF = 10 A
-
660 mV
VF3(2)
Forward voltage
4011
Tcase = +125 (+0, -5) °C
pulse method, IF = 20 A
Tcase = -55 (+5, -0) °C
pulse method, IF = 20 A
-
850 mV
-
950 mV
1. Read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. Alternatively a
100% inspection may be performed.
2. Pulse width ≤ 300µs, duty cycle ≤ 2%
Doc ID 17306 Rev 1
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