STTH8R04(2017) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STTH8R04 Datasheet PDF : 14 Pages
| |||
Characteristics
STTH8R04
1
Characteristics
Table 2: Absolute ratings (limiting values, at 25 °C, unless otherwise specified)
Symbol
Parameter
Value Unit
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
TO-220AC, D²PAK
TO-220AC Ins
400
V
30
A
20
IF(AV)
Average forward current
δ = 0.5, square wave
TO-220AC,
D²PAK
TC = 145 °C
8
A
TO-220AC Ins TC = 115 °C
IFRM Repetitive peak forward current
tp = 10 µs, F = 1 kHz
165
A
IFSM
Surge non repetitive forward
current
tp = 10 ms sinusoidal
120
A
Tstg Storage temperature range
Tj
Operating junction temperature range
-65 to +175 °C
-40 to +175 °C
Symbol
Rth(j-c)
Junction to case
Table 3: Thermal parameter
Parameter
TO-220AC, D2PAK
TO-220AC Ins
Max. value
2.5
5.5
Unit
°C/W
Symbol
IR(1)
VF(2)
Table 4: Static electrical characteristics
Parameter
Test conditions
Min.
Tj = 25 °C
-
Reverse leakage current
VR = VRRM
Tj = 125 °C
-
Tj = 25 °C
-
Forward voltage drop
Tj = 100 °C IF = 8 A
-
Tj = 150 °C
-
Typ.
10
1.05
0.90
Max.
10
100
1.50
1.30
1.10
Unit
µA
V
Notes:
(1)Pulse test: tp = 5 ms, δ < 2%
(2)Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.83 x IF(AV) + 0.034 x IF2(RMS)
2/14
DocID13390 Rev 2
Share Link: 