NXP Semiconductors
TDA1566
I2C-bus controlled dual channel/single channel ampliļ¬er
Table 23. Characteristics ā¦continued
Refer to test circuit (see Figure 22); VP = 14.4 V; RL = 4 ā¦; ā40 °C < Tamb < +85 °C and ā40 °C < Tj < +150 °C; unless
otherwise speciļ¬ed.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Ampliļ¬er
Po
output power
RL = 4 ā¦; VP = 14.4 V;
THD = 0.5 %
-
23
-
W
RL = 4 ā¦; VP = 14.4 V;
THD = 3 %
-
24
-
W
RL = 4 ā¦; VP = 14.4 V;
THD = 10 %
24
29
-
W
RL = 4 ā¦; VP = 14.4 V
40
45
-
W
maximum power; Vi = 2 V
(RMS) square wave
RL = 4 ā¦; VP = 15.2 V
45
50
-
W
maximum power; Vi = 2 V
(RMS) square wave
RL = 2 ā¦; VP = 14.4 V;
THD = 0.5 %
-
38
-
W
RL = 2 ā¦; VP = 14.4 V;
THD = 3 %
-
41
-
W
RL = 2 ā¦; VP = 14.4 V;
THD = 10 %
39
50
-
W
RL = 2 ā¦; VP = 14.4 V
67
75
-
W
maximum power; Vi = 2 V
(RMS) square wave
RL = 1 ā¦; VP = 14.4 V;
THD = 0.5 %
-
74
-
W
RL = 1 ā¦; VP = 14.4 V;
THD = 3 %
-
81
-
W
RL = 1 ā¦; VP = 14.4 V;
THD = 10 %
78
92
-
W
RL = 1 ā¦; VP = 14.4 V
130
150
-
W
maximum power; Vi = 2 V
(RMS) square wave
THD
total harmonic
distortion
Po = 1 W to 12 W; f = 1 kHz;
-
RL = 4 ā¦
Po = 1 W to 12 W; f = 1 kHz;
-
RL = 2 ā¦
Po = 1 W to 12 W; f = 1 kHz;
-
RL = 1 ā¦
Po = 1 W to 12 W; f = 10 kHz;
-
measured with 30 kHz ļ¬lter;
RL = 4 ā¦
Po = 1 W to 12 W; f = 10 kHz;
-
measured with 30 kHz ļ¬lter;
RL = 2 ā¦
line driver mode; Vo =1 V
-
(RMS) and 5 V (RMS);
f = 20 Hz to 20 kHz;
RL = 400 ā¦
0.005 0.1
%
0.01
0.2
%
0.02
%
0.1
0.3
%
0.2
0.6
%
0.02
0.1
%
TDA1566_2
Product data sheet
Rev. 02 ā 20 August 2007
Ā© NXP B.V. 2007. All rights reserved.
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