TL05x, TL05xA
ENHANCED-JFET LOW-OFFSET
OPERATIONAL AMPLIFIERS
SLOS178A – FEBRUARY 1997 - REVISED FEBRUARY 2003
APPLICATION INFORMATION
macromodel information
Macromodel information provided was derived using Microsim Parts, the model-generation software used
with Microsim PSpice. The Boyle macromodel (see Note 6 and subcircuit Figure 92) are generated using the
TL05x typical electrical and operating characteristics at TA = 25°C. Using this information, output simulations
of the following key parameters can be generated to a tolerance of 20% (in most cases):
D Maximum positive output voltage swing
D Maximum negative output voltage swing
D Slew rate
D Quiescent power dissipation
D Input bias current
D Open-loop voltage amplification
D Unity-gain frequency
D Common-mode rejection ratio
D Phase margin
D DC output resistance
D AC output resistance
D Short-circuit output current limit
NOTE 6: G. R. Boyle, B. M. Cohn, D. O. Pederson, and J. E. Solomon, “Macromodeling of Integrated Circuit Operational Amplifiers”, IEEE Journal
of Solid-State Circuits, SC-9, 353 (1974).
VCC+
RP
2
IN–
IN+
3
3
RSS
ISS
10
DP
J1
J2
11
RD1
12
C1 RD2
+
VC
R2
–
53
DC
99
EGND +
9
+
VB
–
FB
–
C2
6
GCM
GA
DLN
RO2 90
HLIM
+ DLP
–
91
+
VLP
–
7
+
VLIM
–
8
92
–
VLN
+
VCC–
VAD +
–
4
60
DE
54
–+
VE
.SUBCKT TL05x 1 2 3 4 5
C1 11 12 3.988E–12
C2 6 7 15.00E–12
DC 5 53 DX
DE 54 5 DX
DLP 90 91 DX
DLN 92 90 DX
DP 4 3 DX
EGND 99 0 POLY (2) (3,0) (4,0) 0 .5 .5
FB 7 99 POLY (5) VB VC VE VLP
+ VLN 0 2.875E6 –3E6 3E6 3E6 –3E6
GA 6 0 11 12 292.2E–6
GCM 0 6 10 99 6.542E–9
ISS 3 10 DC 300.0E–6
HLIM 90 0 VLIM 1K
J1 11 2 10 JX
J2 12 1 10 JX
R2 6 9 100.0E3
RO1
5
OUT
RD1 4 11 3.422E3
RD2 4 12 3.422E3
R01 8 5 125
R02 7 99 125
RP 3 4 11.11E3
RSS 10 99 666.7E6
VB 9 0 DC 0
VC 3 53 DC 3
VE 54 4 DC 3.7
VLIM 7 8 DC 0
VLP 91 0 DC 28
VLN 0 92 DC 28
.MODEL DX D (IS=800.0E–18)
.MODEL JX PJF (IS=15.00E–12 BETA=185.2E–6
+ VTO=–.1)
.ENDS
Figure 92. Boyle Macromodel and Subcircuit
PSpice and Parts are trademarks of MicroSim Corporation.
Macromodels, simulation models, or other models provided by TI,
directly or indirectly, are not warranted by TI as fully representing all
of the specification and operating characteristics of the
semiconductor product to which the model relates.
48
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