DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TLE4276(2007) View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
TLE4276
(Rev.:2007)
Infineon
Infineon Technologies 
TLE4276 Datasheet PDF : 20 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TLE 4276
Table 5
Characteristics (cont’d)
VI = 13.5 V; -40 °C < Tj < 150 °C (unless otherwise specified)
Parameter
Sym- Limit Values Unit Measuring
bol
Min. Typ. Max.
Condition
Measuring
Circuit
Current
Iq
consumption;
Iq = II - IQ
Drop voltage1) VDR
Drop voltage1) VDR
Load regulation ΔVQ,Lo
Line regulation ΔVQ,Li
Power supply
ripple rejection
Temperature
output voltage
drift
PSRR
dVQ/dT
15 25 mA IQ = 400 mA
1
250 500 mV V50, V85, V10
1
IQ = 250 mA
VDR = VI - VQ
250 500 mV variable devices 1
IQ = 250 mA
VI > 4.5 V
VDR = VI - VQ
5 35 mV IQ = 5 mA to 400 mA 1
15 25 mV ΔVl = 12 V to 32 V 1
IQ = 5 mA
54 –
dB fr = 100 Hz;
1
Vr = 0.5 Vpp
0.5 – – –
mV/K
Inhibit
Inhibit on
VINH
2
3.5 V
VQ 4.9 V
1
voltage
Inhibit off
VINH 0.5 1.7 –
V
VQ 0.1 V
1
voltage
Input current
IINH
5
10 20 μA VINH = 5 V
1
1) Measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at VI = 13.5 V.
Data Sheet
8
Rev. 2.6, 2007-03-20

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]