VND10N06/VND10N06-1
VNP10N06FI/K10N06FM
"OMNIFET":
FULLY AUTOPROTECTED POWER MOSFET
TYPE
VND10N06
VND10N06-1
VNP10N06FI
VNK10N06FM
Vclamp
60 V
60 V
60 V
60 V
RDS(on)
0.3 Ω
0.3 Ω
0.3 Ω
0.3 Ω
Ilim
10 A
10 A
10 A
10 A
s LINEAR CURRENT LIMITATION
s THERMAL SHUT DOWN
s SHORT CIRCUIT PROTECTION
s INTEGRATED CLAMP
s LOW CURRENT DRAWN FROM INPUT PIN
s LOGIC LEVEL INPUT THRESHOLD
s ESD PROTECTION
s SCHMITT TRIGGER ON INPUT
s HIGH NOISE IMMUNITY
DESCRIPTION
The VND10N06, VND10N06-1, VNP10N06FI and
VNK10N06FM are monolithic devices made
using SGS-THOMSON Vertical Intelligent Power
M0 Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
the chip in harsh enviroments.
3
1
DPAK
TO-252
3
2
1
IPAK
TO-251
3
2
1
ISOWATT220
SOT82-FM
BLOCK DIAGRAM (*)
(∗) SOT82-FM Pin Configuration: INPUT = 3; SOURCE = 1; DRAIN = 2.
October 1997
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