ZXMN6A09K
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current @ VGS=10V; Tamb=25°C(b)
@ VGS=10V; Tamb=70°C(b)
@ VGS=10V; Tamb=25°C(a)
Pulsed drain current(c)
Continuous source current (body diode)(b)
Pulsed source current (body diode)(c)
Power dissipation at Tamb =25°C(a)
Linear derating factor
Power dissipation at Tamb =25°C(a)
Linear derating factor
Power dissipation at Tamb =25°C(a)
Linear derating factor
Operating and storage temperature range
Symbol
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
PD
Tj, Tstg
Limit
60
±20
12.2
9.8
7.9
43
10.8
43
4.3
34.4
10.1
80.8
2.15
17.2
-55 to +150
Unit
V
V
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)
Junction to ambient(b)
Junction to ambient(d)
Symbol
R⍜JA
R⍜JA
R⍜JA
Limit
29
12.3
58.1
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum
junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Issue 5 - January 2007
2
© Zetex Semiconductors plc 2007
www.zetex.com