2N7002K View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
2N7002K Datasheet PDF : 12 Pages
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Philips Semiconductors
2N7002K
TrenchMOS™ logic level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
2N7002K
SOT23
Plastic surface mounted package; 3 leads.
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
25 °C ≤ Tj ≤ 150 °C
-
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
-
-
Tsp = 25 °C; VGS = 10 V; Figure 2 and 3
-
Tsp = 100 °C; VGS = 10 V; Figure 2
-
Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
-
Tsp = 25 °C; Figure 1
-
−65
−65
IS
source (diode forward) current (DC) Tsp = 25 °C
-
ISM
peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs
-
Electrostatic discharge voltage
Vesd
electrostatic discharge voltage
Human Body Model 1; C = 100 pF; R = 1.5 kΩ -
Version
SOT23
Max Unit
60
V
60
V
±15
V
340
mA
215
mA
680
mA
0.83 W
+150 °C
+150 °C
340
mA
680
mA
1
kV
9397 750 11703
Product data
Rev. 01 — 20 October 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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