SMP80MC View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

SMP80MC

TRISIL™ for telecom equipment protection

STMicroelectronics 

SMP80MC

Characteristics

Table 3.

Symbol

Thermal resistances

Parameter

Rth(j-a) Junction to ambient (with recommended footprint)

Rth(j-l) Junction to leads

Table 4.

Symbol

Electrical characteristics (Tamb = 25° C)

Parameter

VRM

VBR

VBO

IRM

IPP

IBO

IH

VR

IR

C

Stand-off voltage

Breakdown voltage

Breakover voltage

Leakage current

Peak pulse current

Breakover current

Holding current

Continuous reverse voltage

Leakage current at VR

Capacitance

Value

100

20

Unit

° C/W

° C/W

Types

IRM @ VRM

IR @ VR(1)

Dynamic Static

VBO(2) VBO @ IBO(3)

IH(4)

C(5)

C(6)

max.

max.

max. max. max. min. typ. typ.

µA V µA V

V

SMP80MC-120

108

120 155

SMP80MC-140

126

140 180

SMP80MC-160

144

160 205

SMP80MC-200 2 180 5 200 255

SMP80MC-230

207

230 295

SMP80MC-270

243

270 345

SMP80MC-320

290

320 400

1. IR measured at VR guarantee VBR min ≥ VR

2. See Figure 9 functional test circuit 1

3. See Figure 10 test circuit 2

4. See Figure 11 functional holding current test circuit 3

5. VR = 50 V bias, VRMS = 1 V, F= 1 MHz

6. VR = 2 V bias, VRMS = 1 V, F = 1 MHz

V mA mA pF pF

155

180

205

255 800 150 12 25

295

345

400

3/10

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