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GSD2004WS(2002) View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
Manufacturer
GSD2004WS
(Rev.:2002)
Vishay
Vishay Semiconductors 
GSD2004WS Datasheet PDF : 2 Pages
1 2
GSD2004WS
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics TJ = 25°C unless otherwise noted
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Breakdown Voltage
VBR
IR = 100µA
300
V
Leakage Current
IR
VR = 240V
VR = 240V, Tj = 150°C
100
nA
100
µA
Forward Voltage
VF
IF = 20mA
IF = 100mA
0.83
0.87
1.00
V
Capacitance
Ctot
VF = VR = 0
f = 1MHz
5.0
pF
Reverse Recovery Time
trr
IF = IA = 30mA
50
ns
Irr = 3.0mA, RL = 100
Note:
(1 )Device on fiberglass substrate, see layout
www.vishay.com
2
Document Number 88202
14-May-02

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