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Part Name
Description
GSD2004WS(2002) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
GSD2004WS
(Rev.:2002)
High-Voltage Small-Signal Switching Diode
Vishay Semiconductors
GSD2004WS Datasheet PDF : 2 Pages
1
2
GSD2004WS
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
T
J
= 25
°
C unless otherwise noted
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Breakdown Voltage
V
BR
I
R
= 100
µ
A
300
—
—
V
Leakage Current
I
R
V
R
= 240V
V
R
= 240V, T
j
= 150
°
C
—
—
—
100
nA
—
100
µ
A
Forward Voltage
V
F
I
F
= 20mA
I
F
= 100mA
—
—
0.83
0.87
—
1.00
V
Capacitance
C
tot
V
F
= V
R
= 0
f = 1MHz
—
—
5.0
pF
Reverse Recovery Time
t
rr
I
F
= I
A
= 30mA
—
—
50
ns
I
rr
= 3.0mA, R
L
= 100
Ω
Note:
(1 )Device on fiberglass substrate, see layout
www.vishay.com
2
Document Number 88202
14-May-02
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