GSD2004C-HE3-08 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
GSD2004C-HE3-08 Datasheet PDF : 5 Pages
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www.vishay.com
GSD2004C
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Reverse breakdown voltage
IR = 100 μA
VBR
300
Leakage current
VR = 240 V
IR
VR = 240 V, Tj = 150 °C
IR
Forward voltage
IF = 20 mA
VF
IF = 100 mA
VF
0.83
Diode capacitance
VF = VR = 0, f = 1 MHz
CD
Reverse recovery time
IF = IR = 30 mA, iR = 3 mA,
RL = 100
trr
MAX.
100
100
0.87
1
5
50
UNIT
V
nA
μA
V
V
pF
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
100
TJ = 150 ° C
10
100° C
25 ° C
1
18543
0.1
100 200 300 400 500 600 700 800 900 1000
VF - Forward Voltage ( mV )
10 5
TJ = 150 ° C
10 4
100° C
10 3
10 2
10
0
18544
25 ° C
50 100 150 200 250
VR - Reverse Voltage ( V )
Fig. 1 - Typical Instantaneous Forward Characteristics
Fig. 2 - Typical Reverse Characteristics
LAYOUT FOR RthJA TEST
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
12 (0.47)
15 (0.59)
0.8 (0.03)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
Rev. 1.2, 13-Feb-18
2
Document Number: 85424
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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