2SA1036K View Datasheet(PDF) - Weitron Technology

Part Name

Description

Manufacturer

2SA1036K

PNP General Purpose Transistors

Weitron Technology 

2SA1036K

ELECTRICAL CHARACTERISTICS

Characteristics

Collector-Emitter Breakdown Voltage

IC = -1mA, IE = 0A

Collector-Base Breakdown Voltage

IC = -100µA, IB = 0A

Emitter-Base Breakdown Voltage

IE= 100µA, IC=0

Collector Cutoff Current

VCB = -20V, IC = 0A

Emitter Cutoff Current

VEB = -4V, IC = 0A

Symbol

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICBO

IEBO

Min

-32

-40

-5.0

-

-

ON CHARACTERISTICS

Collector-Emitter Saturation Voltage

IC = -100mA, IB = -10mA

DC Current Transfer Ration

VCE = -3V, IC = -10mA

VCE(sat)

-

hFE

82

Typ

Max

Unit

-

-

V

-

-

V

-

-

V

-

1.0

µA

-

1.0

µA

-

-0.4

V

-

390

V

SMALL-SIGNAL CHARACTERISTICS

Transition frequence

VCE=-5V, IE=20mA, f=100MHz

fT

-

200

-

MHz

Output Capacitance

VCB = -10V, IE = 0A, f = 1.0MHz

Cob

-

7

-

pF

CLASSIFICATION hFE

Rank

P

Range

82-180

Q

120-270

R

180-390

WEITRON

2/4

http://www.weitron.com.tw

02-Mar-06

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