BAS20(2015) View Datasheet(PDF) - Semtech Electronics LTD.
Part Name
Description
Manufacturer
BAS20 Datasheet PDF : 2 Pages
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BAS19, BAS20, BAS21
Silicon Epitaxial Planar Diodes
High Voltage Switching Diodes
3
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current
Non-repetitive Peak Forward Surge Current
Total Device Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature Range
12
Marking Code: HC
TO-236 Plastic Package
BAS19
BAS20
BAS21
at t = 1 s
at t = 1 μs
Symbol
VR
IF(AV)
IFRM
IFSM
Ptot
RθJA
Tj, Tstg
Value
120
200
250
200
625
0.5
2.5
350
357
- 55 to + 150
Unit
V
mA
mA
A
mW
OC/W
OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 100 mA
at IF = 200 mA
Reverse Breakdown Voltage
at IR = 100 µA
at IR = 100 µA
at IR = 100 µA
Reverse Current
at VR = 100 V
at VR = 150 V
at VR = 200 V
at VR = 100 V, Tj = 150 OC
at VR = 150 V, Tj = 150 OC
at VR = 200 V, Tj = 150 OC
Total Capacitance
at VR = 0, f = 1 MHz
Reverse Recovery Time
at IF = IR= 30 mA, IR(REC) = 3 mA, RL = 100 Ω
Symbol
Min.
Max.
Unit
VF
-
1
V
-
1.25
V
BAS19
BAS20
V(BR)
120
200
-
-
V
V
BAS21
250
-
V
BAS19
BAS20
BAS21
IR
BAS19
BAS20
BAS21
-
0.1
µA
-
0.1
µA
-
0.1
µA
-
100
µA
-
100
µA
-
100
µA
Ctot
-
5
pF
trr
-
50
ns
SEMTECH ELECTRONICS LTD.
®
Dated : 16/03/2015 Rev:01
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