IRF630 View Datasheet(PDF) - DC COMPONENTS
Part Name
Description
Manufacturer
IRF630 Datasheet PDF : 2 Pages
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IRF630
N-Channel Power MOSFET
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Characteristic
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Forward Leakage Current
Gate-Source Reverse Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
Symbol Min
Typ
V(BR)DSS
200
-
-
-
IDSS
-
-
IGSSF
-
-
IGSSR
-
-
VGS(th)
2.0
-
RDS(on)
-
-
gFS
3.8
-
Ciss
-
800
Coss
-
240
Crss
-
76
td(on)
-
9.4
tr
-
28
td(off)
-
39
tf
-
20
Qg
-
-
Qgs
-
-
Qgd
-
-
LD
-
4.5
Max
-
25
250
100
-100
4.0
0.4
-
-
-
-
-
-
-
-
43
7.0
23
-
Unit
Test Conditions
V VGS=0V, ID=250µA
µA
VDS=200V, VGS=0V
VDS=160V, VGS=0V, TJ=125oC
VGSF=20V, VDS=0V
nA
VGSR=-20V, VDS=0V
V VDS=VGS, ID=250µA
Ω VGS=10V, ID=5.4A(Note)
S VDS=50V, ID=5.4A(Note)
pF VDS=25V, VGS=0V, f=1.0MHz
ns
VDD=100V, ID=5.9A,
RG=12Ω, RD=16Ω(Note)
nC VDS=160V, ID=5.9A, VGS=10V(Note)
nH
Measured from the drain lead 0.25"
from package to center of die
Internal Source Inductance
LS
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Forward Turn-On Time
ton
Thermal Resistance
Junction to Case
Junction to Ambient
RθJC
RθJA
Note: Pulse Test: Pulse Width 300µs, Duty Cycle 2%
-
7.5
-
nH
Measured from the source lead 0.25"
from package to source bond pad
-
-
2.0
V IS=9.0A, VGS=0V(Note)
-
170
340
ns IF=5.9A, di/dt=100A/µs(Note)
Intrinsic turn-on time is neglegible and dominated by inductance LS+LD
-
-
1.7 oC/W -
-
-
62
DC COMPONENTS CO., LTD.
R
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