APPENDIX
3.1 Electrical characteristics
Table 3.1.6 Electrical characteristics
(Vcc = 2.5 to 5.5 V, Ta = –20 to 85°C, unless otherwise noted)
Symbol
VRAM
ICC
Parameter
Test conditions
Min.
RAM hold voltage
When clock is stopped
2.0
Power source current
High-speed mode, Vcc = 5 V
f(XIN) = 8 MHz
f(XCIN) = 32.768 kHz
Output transistors “off”,
A-D converter in operating
High-speed mode, Vcc = 5 V
f(XIN) = 8 MHz (in WIT state)
f(XCIN) = 32.768 kHz
Output transistors “off”,
A-D converter stopped
Low-speed mode, VCC = 3 V,
Ta ≤ 55 °C
f(XIN) = stopped
f(XCIN) = 32.768 kHz
Output transistors “off”
Low-speed mode, VCC = 3 V,
Ta = 25 °C
f(XIN) = stopped
f(XCIN) = 32.768 kHz
(in WIT state)
Output transistors “off”
All oscillation stopped Ta = 25 °C
(in STP state)
Output transistors “off” Ta = 85 °C
Limits
Typ.
6.4
1.6
15
4.5
0.1
Max.
Unit
5.5
V
13
mA
3.2
mA
22
µA
9.0
µA
1.0
µA
10
µA
3-6
38C3 Group User’s Manual