STP14NF12FP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP14NF12FP

N-channel 120V - 0.16Ω- 14A - TO-220/TO-220FP Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STP14NF12 - STP14NF12FP

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

trr

Qrr

IRRM

Source-drain current

Source-drain current

(pulsed)

Forward on voltage

ISD = 14A, VGS = 0

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 14A,

di/dt = 100A/µs,

VDD = 50V, Tj = 150°C

(see Figure 17)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Min. Typ. Max. Unit

14

A

56

A

1.5 V

92

ns

230

nC

5

A

5/14

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