STK20N3LLH5 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STK20N3LLH5

N-channel 30 V, 0.006 Ω, 20 A, PolarPAK® STripFET™V Power MOSFET

STMicroelectronics 

Features

STK20N3LLH5

N-channel 30 V, 0.006 Ω, 20 A, PolarPAK®

STripFET™V Power MOSFET

Preliminary Data

Type

VDSS

STK20N3LLH5 30 V

RDS(on)

max

< 0.007 Ω

RDS(on)*Qg

68 nC*mΩ

■ Ultra low top and bottom junction to case

thermal resistance

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ Very low switching gate charge

■ Fully encapsulated die

■ 100% matte tin finish (in compliance with the

2002/95/EC european directive)

■ High avalanche ruggedness

■ PolarPAK® is a trademark of VISHAY

Application

■ Switching applications

Description

This product utilizes the 5th generation of design

rules of ST’s proprietary STripFET™ technology.

The lowest available RDS(on)*Qg, in this chip scale

package, makes this device suitable for the most

demanding DC-DC converter applications, where

high power density is to be achieved.

PolarPAK®

Figure 1. Internal schematic diagram

Bottom view

Top view

Table 1. Device summary

Order code

STK20N3LLH5

Marking

203L5

Package

PolarPAK®

Packaging

Tape and reel

September 2008

Rev 1

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

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