STPS8H100G(1999) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS8H100G Datasheet PDF : 7 Pages
| |||
STPS8H100D/F/G/G-1
Fig. 2-2: Average forward current versus ambient
temperature(δ=0.5) (ISOWATT220AC).
IF(av)(A)
10
8
Rth(j-a)=Rth(j-c)
6
4
T
2
δ=tp/T
tp
0
0 20 40
Rth(j-a)=50°C/W
Tamb(°C)
60 80 100 120 140 160 180
Fig. 3-1: Non repetitive surge peak forward current
versus overload duration (maximum values)
(TO-220AC / I2PAK / D2PAK).
IM(A)
160
140
120
100
80
60
40
IM
20
t
δ=0.5
0
1E-3
Tc=75°C
Tc=100°C
t(s)
1E-2
1E-1
Tc=125°C
1E+0
Fig. 3-2: Non repetitive surge peak forward current
versus overload duration (maximum values)
(ISOWATT220AC).
Fig. 4-1: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220AC / I2PAK / D2PAK).
IM(A)
100
90
80
70
60
50
40
30
20 IM
10
t
δ =0.5
0
1E-3
Tc=75°C
Tc=100°C
t(s)
1E-2
1E-1
Tc=125°C
1E+0
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
0.0
1E-4
Single pulse
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
Fig. 4-2: Relative variation of thermal impedance
junction to case versus pulse duration
(ISOWATT220AC).
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
0.0
1E-3
Single pulse
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
IR(µA)
5E+3
1E+3
Tj=125°C
1E+2
1E+1
1E+0
1E-1
1E-2
0
Tj=25°C
VR(V)
10 20 30 40 50 60 70 80 90 100
3/7
Share Link: 