STP140NF75 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP140NF75

N-channel 75V - 0.0065Ω - 120A - D2PAK/I2/TO-220 STripFET™ III Power MOSFET

STMicroelectronics 

STB140NF75 - STP140NF75-1 - STP140NF75

Figure 17. Allowable lav vs time in avalanche

Electrical characteristics

The previous curve gives the safe operating area for unclamped inductive loads, single

pulse or repetitive, under the following conditions:

PD(AVE) = 0.5 * (1.3 * BVDSS * IAV)

EAS(AR) = PD(AVE) * tAV

Where:

IAV is the allowable current in avalanche

PD(AVE) is the average power dissipation in avalanche (single pulse)

tAV is the time in avalanche

To derate above 25 °C, at fixed IAV , the following equation must be applied:

IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth)

Where:

Zth = K * Rth is the value coming from normalized thermal response at fixed pulse width

equal to TAV .

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