MC9S08SH8CSC View Datasheet(PDF) - Freescale Semiconductor

Part Name

Description

Manufacturer

MC9S08SH8CSC

HCS08 Microcontrollers

Freescale Semiconductor 

Appendix A Electrical Characteristics

A.5 ESD Protection and Latch-Up Immunity

Although damage from electrostatic discharge (ESD) is much less common on these devices than on early

CMOS circuits, normal handling precautions should be used to avoid exposure to static discharge.

Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels

of static without suffering any permanent damage.

All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade

Integrated Circuits. During the device qualification ESD stresses were performed for the human body

model (HBM) and the charge device model (CDM).

A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device

specification. Complete DC parametric and functional testing is performed per the applicable device

specification at room temperature followed by hot temperature, unless specified otherwise in the device

specification.

Table A-4. ESD and Latch-up Test Conditions

Model

Human

Body

Latch-up

Description

Series resistance

Storage capacitance

Number of pulses per pin

Minimum input voltage limit

Maximum input voltage limit

Symbol

R1

C

—

Value

1500

100

3

– 2.5

7.5

Unit

Ω

pF

V

V

Table A-5. ESD and Latch-Up Protection Characteristics

No.

Rating1

Symbol

Min

Max Unit

1

Human body model (HBM)

VHBM

± 2000

—

V

2

Charge device model (CDM)

VCDM

± 500

—

V

3

Latch-up current at TA = 125°C

ILAT

± 100

—

mA

1 Parameter is achieved by design characterization on a small sample size from typical devices

under typical conditions unless otherwise noted.

MC9S08SH8 MCU Series Data Sheet, Rev. 3

Freescale Semiconductor

293

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