SLD233VL View Datasheet(PDF) - Sony Semiconductor

Part Name

Description

Manufacturer

SLD233VL

Index-Guided High Power AlGaAs Laser Diode

Sony Semiconductor 

Optical and Electrical Characteristics (Tc = 25°C)

Item

Symbol

Conditions

Threshold current

Ith

Operating current

Iop

PO = 35mW

Operating voltage

Vop

PO = 35mW

Oscillation wavelength

λ

PO = 35mW

Radiation

angle

Perpendicular θ⊥

Parallel

θ//

PO = 35mW

Positional

accuracy

Position

Angle

∆X, ∆Y, ∆Z

∆φ⊥

∆φ//

PO = 35mW

Differential efficiency

ηD

PO = 30mW

Astigmatism

As

Coherence

γ

PO = 4mW

SLD233VL

Tc: Case temperature

Min. Typ. Max. Unit

30

40

mA

70

85

mA

2.0

2.5

V

780 790 800

nm

26 28.5 32 degree

7.4 8.5 10.0 degree

±80

µm

±3 degree

±2 degree

0.55 0.9

1.2 mW/mA

–16

µm

0.7

0.9

–2–

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