STPS40M120CR View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STPS40M120CR

Power Schottky rectifier

STMicroelectronics 

Characteristics

STPS40M120C

Figure 6.

Reverse leakage current versus

reverse voltage applied

(typical values, per diode)

1.E+03 IR(mA)

Figure 7.

C(pF)

10000

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03

0

Tj=150°C

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

VR(V)

10 20 30 40 50 60 70 80 90 100 110 120

1000

100

1

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

F=1MHz

Vosc =30mVRMS

Tj=25°C

VR(V)

10

100

1000

Figure 8. Forward voltage drop versus

Figure 9. Reverse safe operating area

forward current (per diode)

(tp < 10 µs and Tj < 125 °C)

IFM(A)

1000.0

Iarm (A)

13.5

100.0

Tj=125°C

(Maximum values)

13.0

12.5

12.0

10.0

Tj=125°C

(Typical values)

Tj=25°C

(Maximum values)

11.5

11.0

10.5

10.0

1.0

9.5

Varm (V)

9.0

VFM(V)

120

130

140

150

160

170

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

4/9

Doc ID 022916 Rev 1

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