STPS40SM80CR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS40SM80CR Datasheet PDF : 11 Pages
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Characteristics
STPS40SM80C
Figure 6.
220 IM(A)
200
180
160
140
120
100
80
60
40
IM
20
0
1.E-03
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
TO-220AB / I2PAK / D2PAK
t
δ = 0.5
1.E-02
Tc = 25 °C
Tc = 75 °C
Tc = 125 °C
1.E-01
t(s)
1.E+00
Figure 7.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
120 IM(A)
110
100
90
80
70
60
50
40
30
20
IM
10
0
1.E-03
t
δ = 0.5
1.E-02
TO-220FPAB
Tc = 25 °C
Tc = 75 °C
Tc = 125 °C
1.E-01
t(s)
1.E+00
Figure 8.
Relative thermal impedance
junction to case versus pulse
duration
1.0 Zth(j-c)/Rth(j-c)
TO-220AB / I2PAK / D2PAK
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2 Single pulse
0.1
0.0
1.E-04
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00
Figure 9.
Relative thermal impedance
junction to case versus pulse
duration (TO-220FPAB)
1.0 Zth(j-c)/Rth(j-c)
0.9
TO-220FPAB
0.8
0.7
0.6
0.5
0.4
0.3
Single pulse
0.2
0.1
0.0
1.E-03
1.E-02
1.E-01
1.E+00
tp(s)
1.E+01
Figure 10. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
1.E+05 IR(µA)
Tj = 150 °C
1.E+04
Tj = 125 °C
1.E+03
1.E+02
Tj = 100 °C
Tj = 75 °C
Tj = 50 °C
1.E+01
Tj = 25 °C
1.E+00
0
VR(V)
10
20
30
40
50
60
70
80
Figure 11. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
10000 C(pF)
F = 1 MHz
Vosc = 30 mVRMS
Tj = 25 °C
1000
100
1
VR(V)
10
100
4/11
Doc ID 018719 Rev 1
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