STP4N52K3 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP4N52K3

N-channel 525 V, 2.5 A, 2.1 Ω typ., SuperMESH3™ Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

STMicroelectronics 

Electrical characteristics

STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3

Figure 14. Normalized gate threshold voltage Figure 15. Normalized on-resistance vs

vs temperature

temperature

VGS(th)

(norm)

AM08646v1

RDS(on)

(norm)

AM08647v1

1.1

2.5

1.0

2.0

0.9

1.5

0.8

1.0

0.7

0.6

0.5

0.5

-75 -25

25

75 125

TJ(°C)

0

-75 -25

25

75

125 TJ(°C)

Figure 16. Source-drain diode forward

characteristics

Figure 17. Maximum avalanche energy vs

starting Tj

VSD

(V)

AM08649v1

EAS (mJ)

AM08650v1

1.0

TJ=-50°C

120

ID=2.5 A

VDD=50 V

100

0.9

0.8

80

TJ=25°C

0.7

60

0.6

40

TJ=150°C

0.5

20

0.4

0

0.5 1

1.5 2

2.5 ISD(A)

0

0 20 40 60 80 100 120 140 TJ(°C)

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Doc ID 18206 Rev 2

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