STM32F217RGH6 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM32F217RGH6

ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/128+4KB RAM, crypto, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera

STMicroelectronics 

Electrical characteristics

STM32F21xxx

Note:

1. Better performance could be achieved in restricted VDD, frequency and temperature ranges.

2. Based on characterization, not tested in production.

ADC accuracy vs. negative injection current: injecting a negative current on any analog input

pins should be avoided as this significantly reduces the accuracy of the conversion being

performed on another analog input. It is recommended to add a Schottky diode (pin to

ground) to analog pins which may potentially inject negative currents.

Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in

Section 5.3.16 does not affect the ADC accuracy.

Figure 48. ADC accuracy characteristics

4095

4094

4093

7

6

5

4

3

2

1

[1LSBIDEAL

=VREF+

4096

(or

VDDA depending

4096

on

package)]

EG

(2)

ET

(3)

(1)

EO

EL

ED

1L SBIDEAL

0

1 2 3 456

VSSA

7

4093 4094 4095 4096

VDDA

ai14395c

1. Example of an actual transfer curve.

2. Ideal transfer curve.

3. End point correlation line.

4. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.

EO = Offset Error: deviation between the first actual transition and the first ideal one.

EG = Gain Error: deviation between the last ideal transition and the last actual one.

ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.

EL = Integral Linearity Error: maximum deviation between any actual transition and the end point

correlation line.

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Doc ID 17050 Rev 8

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