STM32F21xxx
Electrical characteristics
Figure 55. Asynchronous multiplexed PSRAM/NOR read waveforms
tw(NE)
FSMC_NE
tv(NOE_NE)
t h(NE_NOE)
FSMC_NOE
FSMC_NWE
FSMC_A[25:16]
FSMC_NBL[1:0]
FSMC_AD[15:0]
FSMC_NADV
t w(NOE)
tv(A_NE)
tv(BL_NE)
Address
NBL
th(A_NOE)
th(BL_NOE)
t v(A_NE)
Address
t v(NADV_NE)
tw(NADV)
tsu(Data_NE)
tsu(Data_NOE)
Data
th(AD_NADV)
th(Data_NE)
th(Data_NOE)
ai14892b
Table 71. Asynchronous multiplexed PSRAM/NOR read timings(1)(2)
Symbol
Parameter
Min
Max
Unit
tw(NE) FSMC_NE low time
3THCLK-1
3THCLK+1
ns
tv(NOE_NE) FSMC_NEx low to FSMC_NOE low
2THCLK
2THCLK+0.5
ns
tw(NOE) FSMC_NOE low time
THCLK-1
THCLK+1
ns
th(NE_NOE) FSMC_NOE high to FSMC_NE high hold time
0
-
ns
tv(A_NE) FSMC_NEx low to FSMC_A valid
-
2
ns
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low
1
2.5
ns
tw(NADV) FSMC_NADV low time
THCLK– 1.5
THCLK
ns
th(AD_NADV)
FSMC_AD(adress) valid hold time after
FSMC_NADV high)
THCLK
-
ns
th(A_NOE) Address hold time after FSMC_NOE high
THCLK
-
ns
th(BL_NOE) FSMC_BL time after FSMC_NOE high
0
-
ns
tv(BL_NE) FSMC_NEx low to FSMC_BL valid
-
1
ns
tsu(Data_NE) Data to FSMC_NEx high setup time
THCLK+ 2
-
ns
tsu(Data_NOE) Data to FSMC_NOE high setup time
THCLK+ 3
-
ns
th(Data_NE) Data hold time after FSMC_NEx high
0
-
ns
th(Data_NOE) Data hold time after FSMC_NOE high
0
-
ns
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Doc ID 17050 Rev 8
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