STM32F215RGT7VTR View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM32F215RGT7VTR

ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/128+4KB RAM, crypto, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera

STMicroelectronics 

Electrical characteristics

STM32F21xxx

5.3.6

Table 16. Embedded reset and power control block characteristics (continued)

Symbol

Parameter

Conditions

Min Typ Max Unit

VBOR1

Brownout level 1

threshold

Falling edge

Rising edge

VBOR2

Brownout level 2

threshold

Falling edge

Rising edge

VBOR3

Brownout level 3

threshold

VBORhyst(2) BOR hysteresis

TRSTTEMPO(2)(3) Reset temporization

IRUSH(2)

InRush current on

voltage regulator

power-on (POR or

wakeup from Standby)

Falling edge

Rising edge

ERUSH(2)

InRush energy on

voltage regulator

power-on (POR or

wakeup from Standby)

VDD = 1.8 V, TA = 105 °C,

IRUSH = 171 mA for 31 µs

2.13 2.19 2.24 V

2.23 2.29 2.33 V

2.44 2.50 2.56 V

2.53 2.59 2.63 V

2.75 2.83 2.88 V

2.85 2.92 2.97

- 100 - mV

0.5 1.5 3.0 ms

- 160 200 mA

-

- 5.4 µC

1. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.

2. Guaranteed by design, not tested in production.

3. The reset temporization is measured from the power-on (POR reset or wakeup from VBAT) to the instant

when first instruction is read by the user application code.

Supply current characteristics

The current consumption is a function of several parameters and factors such as the

operating voltage, ambient temperature, I/O pin loading, device software configuration,

operating frequencies, I/O pin switching rate, program location in memory and executed

binary code.

The current consumption is measured as described in Figure 17: Current consumption

measurement scheme.

All Run mode current consumption measurements given in this section are performed using

CoreMark code.

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Doc ID 17050 Rev 8

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