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STM32F215RGH7TR View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STM32F215RGH7TR Datasheet PDF : 173 Pages
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STM32F21xxx
Electrical characteristics
Table 23. Peripheral current consumption (continued)
Peripheral(1)
Typical consumption at 25 °C
SDIO
0.69
TIM1
1.06
TIM8
1.03
TIM9
0.58
TIM10
0.37
APB2
TIM11
ADC1(4)
ADC2(4)
ADC3(4)
0.39
2.13
2.04
2.12
SPI1
1.20
USART1
0.38
USART6
0.37
1. External clock is 25 MHz (HSE oscillator with 25 MHz crystal) and PLL is on.
2. EN1 bit is set in DAC_CR register.
3. EN2 bit is set in DAC_CR register.
4. fADC = fPCLK2/2, ADON bit set in ADC_CR2 register.
Unit
mA
5.3.7
Wakeup time from low-power mode
The wakeup times given in Table 24 is measured on a wakeup phase with a 16 MHz HSI RC
oscillator. The clock source used to wake up the device depends from the current operating
mode:
Stop or Standby mode: the clock source is the RC oscillator
Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under ambient temperature and VDD supply
voltage conditions summarized in Table 11.
Table 24. Low-power mode wakeup timings
Symbol
Parameter
Min(1) Typ(1) Max(1) Unit
tWUSLEEP(2)
Wakeup from Sleep mode
-
1
-
µs
Wakeup from Stop mode (regulator in Run mode)
-
13
-
tWUSTOP(2)
Wakeup from Stop mode (regulator in low power mode)
-
17
40
µs
Wakeup from Stop mode (regulator in low power mode
and Flash memory in Deep power down mode)
-
110
-
tWUSTDBY(2)(3) Wakeup from Standby mode
260
375 480 µs
1. Based on characterization, not tested in production.
2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first instruction.
3. tWUSTDBY minimum and maximum values are given at 105 °C and –45 °C, respectively.
Doc ID 17050 Rev 8
79/173

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