STP31N65M5 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP31N65M5

N-channel 650 V, 0.124 Ω typ., 22 A MDmesh™ V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages

STMicroelectronics 

STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5 Electrical characteristics

Figure 14. Normalized gate threshold voltage vs

temperature

VGS(th)

(norm)

1.10

1.00

AM05459v2

ID = 250 µA

VDS = VGS

0.90

0.80

0.70

-50 -25 0 25 50 75 100 TJ(°C)

Figure 15. Normalized on-resistance vs

temperature

RDS(on)

(norm)

2.1

1.9

1.7

VGS= 10 V

ID= 11 A

AM05460v2

1.5

1.3

1.1

0.9

0.7

0.5

-50 -25 0

25 50 75 100 TJ(°C)

Figure 16. Source-drain diode forward

characteristics

VSD

(V)

TJ=-50°C

1.2

AM05461v1

1.0

0.8

0.6

TJ=150°C

0.4

0.2

TJ=25°C

0

0 10 20 30 40 50 ISD(A)

Figure 17. Normalized BVDSS vs temperature

VDS

(norm)

1.08

1.06

ID = 1mA

AM10399v1

1.04

1.02

1.00

0.98

0.96

0.94

0.92

-50 -25 0

25 50 75 100 TJ(°C)

Figure 18. Switching losses vs gate

resistance(1)

E (μJ)

300

VDD=400V

VGS=10V

ID=14A

250

AM15196v1

Eon

200

150

100

Eoff

50

0

0

10

20

30

40

1. Eon including reverse recovery of a SiC diode

RG(Ω)

DocID022848 Rev 3

9/25

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