STP2N62K3 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP2N62K3 Datasheet PDF : 25 Pages
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Electrical characteristics
STB/D/F/P/U2N62K3
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on-resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.10
1.05
ID=50µA
AM09190v1
RDS(on)
(norm)
2.5
ID=1.1A
VGS=10V
AM09191v1
1.00
2.0
0.95
1.5
0.90
0.85
1.0
0.80
0.75
0.70
-75 -25
25
75
125
TJ(°C)
0.5
0
-75 -25
25
75 125 TJ(°C)
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized BVDSS vs temperature
VSD (V)
0.9
0.8
TJ=-50°C
AM09193v1
TJ=25°C
BVDSS
(norm)
1.10
ID=1mA
AM09192v1
0.7
0.6 TJ=150°C
0.5
1.05
0.4
1.00
0.3
0.2
0.95
0.1
0
0
1
2
3
4
5 ISD(A)
0.90
-75 -25
25
75 125 TJ(°C)
Figure 18. Maximum avalanche energy vs
starting Tj
EAS (mJ)
AM09180v1
90
ID=2.2 A
80
VDD=50 V
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 TJ(°C)
8/25
Doc ID 018898 Rev 2
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