2SC1567AS View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SC1567AS Datasheet PDF : 4 Pages
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This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SC1567, 2SC1567A
Silicon NPN epitaxial planar type
For low-frequency high power driver
Complementary to 2SA0794, 2SA0794A
■ Features
/ • High collector-emitter voltage (Base open) VCEO
• Optimum for the driver stage of low-frequency and 40 W to 100 W
e output amplifier
. • TO-126B package which requires no insulation plate for installa-
c ge tion to the heat sink
n d cle sta ■ Absolute Maximum Ratings Ta = 25°C
a e lifecy Parameter
Symbol Rating
Unit
t Collector-base voltage 2SC1567 VCBO
100
V
n u duc (Emitter open)
2SC1567A
120
ro Collector-emitter voltage 2SC1567 VCEO
100
V
te tin urP (Baseopen)
2SC1567A
120
g fo e . Emitter-base voltage (Collector open) VEBO
5
V
win typ tion Collector current
IC
0.5
A
in n follo nce e d a Peak collector current
ICP
1
A
es tena typ type form / Collector power dissipation
PC
1.2
W
a o lud in ce d t in /en Junction temperature
Tj
150
°C
c ed inc ed ma tenan tinue type lates o.jp Storage temperature
Tstg −55 to +150 °C
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
M is tinu plan main discontinued about sonic.c ■ Electrical Characteristics Ta = 25°C ± 3°C
con ed on L na Parameter
Symbol
Conditions
Min
/Dis plan disc g UR n.pa Collector-emitter voltage 2SC1567 VCEO IC = 100 µA, IB = 0
100
e in ico (Base open)
2SC1567A
120
Danc llow em Emitter-base voltage (Collector open) VEBO IE = 1 µA, IC = 0
5
ten fo .s Forward current transfer ratio
hFE1 * VCE = 10 V, IC = 150 mA
130
in isit ww hFE2 VCE = 5 V, IC = 500 mA
50
Ma e v ://w Collector-emitter saturation voltage
VCE(sat) IC = 500 mA, IB = 50 mA
leas http Base-emitter saturation voltage
VBE(sat) IC = 500 mA, IB = 50 mA
P Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
Typ Max
330
100
0.2 0.4
0.85 1.20
120
Unit
V
V
V
V
MHz
Collector output capacitance
Cob VCB = 10 V, IE = 0, f = 1 MHz
11 20
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
hFE1
130 to 220 185 to 330
Publication date: February 2003
SJD00092BED
1
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