STFU10N80K5 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STFU10N80K5
STMicroelectronics
STFU10N80K5 Datasheet PDF : 17 Pages
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STF10N80K5, STFU10N80K5
Symbol Parameter
td(on)
Turn-on
delay time
tr
Rise time
td(off)
Turn-off
delay time
tf
Fall time
Table 6: Switching times
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
VDD = 400 V, ID = 4.5 A, RG = 4.7 Ω
VGS = 10 V See Figure 15: "Test circuit for
resistive load switching times" and Figure
20: "Switching time waveform"
- 14.5 -
ns
-
11
-
ns
-
35
-
ns
-
14
-
ns
Symbol
Parameter
ISD
Source-drain
current
ISDM(1)
Source-drain
current (pulsed)
VSD(2)
Forward on
voltage
trr
Reverse
recovery time
Qrr
Reverse
recovery charge
IRRM
Reverse
recovery current
trr
Reverse
recovery time
Qrr
Reverse
recovery charge
IRRM
Reverse
recovery current
Table 7: Source-drain diode
Test conditions
ISD = 9 A, VGS = 0 V
ISD = 9 A, di/dt = 100 A/µs,
VDD = 60 V, see Figure 17: "Test circuit
for inductive load switching and diode
recovery times")
ISD = 9 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
see Figure 17: "Test circuit for inductive
load switching and diode recovery
times"
Min. Typ. Max. Unit
-
9
A
-
36 A
-
1.5 V
- 370
ns
- 4.58
µC
- 25
A
- 520
ns
- 5.88
µC
- 22.5
A
Notes:
(1)Pulse width limited by safe operating area.
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Symbol
V (BR)GSO
Table 8: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS = ± 1 mA, ID = 0 A
Min Typ. Max Unit
30 -
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection,thus eliminating the need for additional external componentry.
DocID026564 Rev 5
5/17
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