STP2N80K5 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP2N80K5
STMicroelectronics
STP2N80K5 Datasheet PDF : 22 Pages
| |||
Electrical characteristics
STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Symbol
Parameter
Table 4. On/off states
Test conditions
V(BR)DSS
Drain-source breakdown
voltage (VGS= 0)
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on-
resistance
ID = 1 mA
VDS = 800 V
VDS = 800 V TC=125 °C
VGS = ± 20 V
VDS = VGS, ID = 100 µA
VGS = 10 V, ID= 1 A
Min. Typ. Max. Unit
800
V
1 µA
50 µA
±10 µA
3
4
5
V
3.5 4.5 Ω
Symbol
Parameter
Table 5. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
- 105 - pF
VDS =100 V, f=1 MHz, VGS=0 -
8
- pF
- 0.5 - pF
Co(tr)(1)
Co(er)(2)
Equivalent capacitance time
related
Equivalent capacitance
energy related
VGS = 0, VDS = 0 to 640 V
- 16 - pF
-
7
- pF
RG Intrinsic gate resistance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
f = 1 MHz, ID=0
VDD = 640 V, ID = 2 A
VGS =10 V
- 18 -
Ω
-
5
- nC
-
1
- nC
- 3.7 - nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/22
DocID024993 Rev 3
Share Link: 