F40NF06(2004) View Datasheet(PDF) - STMicroelectronics
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Description
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F40NF06 Datasheet PDF : 9 Pages
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STF40NF06
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
Test Conditions
Min.
gfs (1) Forward Transconductance VDS = 30 V
ID =11.5A
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
Table 8: Switching On
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDD = 30V, ID = 20A
RG = 4.7Ω VGS = 10V
(see Figure 16)
VDD = 48V, ID = 10A,
VGS = 10V
Min.
Table 9: Switching Off
Symbol
Parameter
td(off)
tf
Turn-off-Delay Time
Fall Time
Test Conditions
VDD = 30V, ID = 20A,
RG=4.7Ω, VGS = 10V
(see Figure 16)
Min.
Table 10: Source Drain Diode
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 23A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 40A, di/dt = 100A/µs,
VDD = 10V, Tj = 150°C
(see test circuit, Figure 5)
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Min.
Typ.
12
920
225
80
Typ.
27
11
32
6.5
15
Typ.
27
11
Typ.
63
150
4.8
Max. Unit
S
pF
pF
pF
Max. Unit
ns
ns
43
nC
nC
nC
Max. Unit
ns
ns
Max. Unit
23
A
92
A
1.3
V
ns
nC
A
3/9
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