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STPS8L30B-TR(1998) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STPS8L30B-TR
(Rev.:1998)
ST-Microelectronics
STMicroelectronics 
STPS8L30B-TR Datasheet PDF : 4 Pages
1 2 3 4
®
STPS8L30B
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
Tj (max)
VF (max)
8A
30 V
150 °C
0.40 V
FEATURES AND BENEFITS
LOW COST DEVICE WITH LOW DROP FOR-
WARD VOLTAGE FOR LESS POWER
DISSIPATION AND REDUCED HEATSINK
OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH LEADS TO THE HIGHEST
YIELD IN THE APPLICATIONS
HIGH POWER SURFACE MOUNT MINIATURE
PACKAGE
2
3
(TAB)
4
4
23
1
NC
DPAK
DESCRIPTION
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequencyDC to DC con-
verters.
Packaged in DPAK, this device is especially in-
tended for use as a Rectifier at the secondary of
3.3V SMPS or DC/DC units.
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) RMS forward current
IF(AV) Average forward current
Tc = 135°C δ = 0.5
IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal
IRRM Repetitive peak reverse current
tp = 2 µs F = 1kHz square
IRSM Non repetitive peak reverse current tp = 100µs square
Tstg Storage temperature range
Tj Maximum junction temperature
dV/dt Critical rate of rise of reverse voltage
Value
30
7
8
75
1
2
- 65 to + 150
150
10000
Unit
V
A
A
A
A
A
°C
°C
V/µs
*
:
dPtot
dTj
<
1
Rth(ja)
thermal
runaway condition for a diode on its own heatsink
October 1998 - Ed: 4A
1/4

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