M24512-W M24512-R M24512-DF
DC and AC parameters
Figure 11. AC measurement I/O waveform
)NPUT VOLTAGE LEVELS
6##
6##
)NPUT AND OUTPUT
4IMING REFERENCE LEVELS
6##
6##
-36
Symbol
Table 11. Input parameters
Parameter(1)
Test condition
CIN
Input capacitance (SDA)
-
CIN
Input capacitance (other pins)
-
ZL
Input impedance (E2, E1, E0, WC)(2)
ZH
VIN < 0.3 VCC
VIN > 0.7 VCC
1. Characterized only, not tested in production.
2. E2, E1, E0 input impedance when the memory is selected (after a Start condition).
Min. Max. Unit
-
8
pF
-
6
pF
30
-
kΩ
500 -
kΩ
Table 12. Cycling performance
Symbol Parameter(1)
Test condition
Max.
Unit
Ncycle
Write cycle
endurance(2)
TA ≤ 25 °C, VCC(min) < VCC < VCC(max)
TA = 85 °C, VCC(min) < VCC < VCC(max)
4,000,000 Write cycle(3)
1,200,000
1. Cycling performance for products identified by process letter KB (previous products were specified with 1
million cycles at 25 °C).
2. The write cycle endurance is defined for group of four bytes located at addresses [4*N, 4*N+1, 4*N+2,
4*N+3] where N is an integer. The Write cycle endurance is defined by characterization and qualification.
3. A Write cycle is executed when either a Page Write, a Byte write, a Write Identification Page or a Lock
Identification Page instruction is decoded. When using the Byte Write, the Page Write or the Write
Identification Page, refer also to Section 5.1.5: ECC (Error Correction Code) and Write cycling
Table 13. Memory cell data retention
Parameter
Test condition
Min.
Unit
Data retention(1)
TA = 55 °C
200(2)
Year
1. The data retention behavior is checked in production, while the data retention limit defined in this table is
extracted from characterization and qualification results.
2. For products identified by process letter KB (previous products were specified with a data retention of 40
years at 55°C).
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