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ESDALC5-1BT2(2010) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
ESDALC5-1BT2
(Rev.:2010)
ST-Microelectronics
STMicroelectronics 
ESDALC5-1BT2 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Characteristics
1
Characteristics
ESDALC5-1BM2, ESDALC5-1BT2
Table 1.
Symbol
Absolute maximum ratings (Tamb = 25 °C)
Parameter
VPP Peak pulse voltage IEC 61000-4-2 contact discharge
PPP(1) Peak pulse power dissipation (8/20 µs)
Tj initial = Tamb
IPP Peak pulse current (8/20 µs)
Tj Junction temperature
Tstg Storage temperature range
TL Maximum lead temperature for soldering during 10 s
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Figure 2. Electrical characteristics (definitions)
Value
Unit
± 30
kV
150
W
9
A
- 55 to + 150 °C
- 65 to + 150 °C
260
°C
Symbol
VBR
=
VCL
=
IRM
=
VRM
=
IPP
=
IR
=
IPP
=
RI/O
=
Cline
=
Parameter
Breakdown voltage
Clamping voltage
Leakage current @ VRM
Stand-off voltage
Peak pulse current
Breakdown current
Forward current
Series resistanc between input and output
Input capacitance per line
I
IR
VBR VRM
IRM
V
IRM VRM VBR
IR
Table 2. Electrical characteristics (values, Tamb = 25 °C)
Symbol
Test condition
Min. Typ. Max. Unit
VBR
IRM
Rd
Cline
From pin1 to pin2, IR = 1 mA (direct)
From pin2 to pin1, IR = 1 mA (reverse)
VRM = 3 V
Square pulse, IPP = 1 A tp = 2.5 µs
F = 1 MHz, VR = 0 V
11
13
V
5
8
50
nA
650
mΩ
26
30
pF
2/14
Doc ID 16936 Rev 1

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