Characteristics
Figure 9: Junction capacitance versus reverse
applied voltage (typical values from I/O1 to I/O2)
C(pF)
35
30
25
20
15
10
5
0
0
1
2
3
Tj = 25 °C
F = 1 MHz
Vosc = 30 mV
from I/O1 to I/O2
VR(V)
4
5
ESDALC5-1BM2, ESDALC5-1BT2
Figure 10: Junction capacitance versus reverse
applied voltage (typical values from I/O2 to I/O1)
C(pF)
35
30
25
Tj = 25 °C
F = 1 MHz
Vosc = 30 mV
from I/O2 to I/O1
20
15
10
5
0
0
1
2
3
VR(V)
4
5
Figure 11: ESD response to IEC 61000-4-2
(+8 kV air discharge)
Figure 12: ESD response to IEC 61000-4-2
(-8 kV air discharge)
Figure 13: S21 attenuation measurement result
0 dB
-5
- 10
- 15
- 20
- 25
- 30
- 35
- 40
100k
1M
10M
100M
F(Hz)
1G
Figure 14: TLP measurement
IPP (A)
20
18
from I/O2 to I/O1
16
14
12
10
8
6
4
from I/O1 to I/O2
2
0
0
V CL (V)
5
10
15
20
25
4/13
DocID16936 Rev 6