STP7N65M2(2014) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP7N65M2
(Rev.:2014)

N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFETs in TO-220 and IPAK packages

STMicroelectronics 

STP7N65M2, STU7N65M2

Electrical characteristics

Figure 8. Gate charge vs gate-source voltage

VGS

(V) VDS

12

VDD=520V

ID=5A

GIPG060820141216FSR

VDS

(V)

600

10

500

8

400

Figure 9. Static drain-source on-resistance

RDS(on)

(Ω)

1.04

VGS=10V

GIPG060820141221FSR

1.02

1.0

6

300

4

200

2

100

0

0

0

2

4

6

8 10 Qg(nC)

0.98

0.96

0.94

0.92

0

1

2

3

4

5 ID(A)

Figure 10. Capacitance variations

C

(pF)

GIPG060820141238FSR

Figure 11. Output capacitance stored energy

Eoss

(μJ)

GIPG060820141302FSR

1000

100

2.4

Ciss

1.8

10

Coss

1.2

1

Crss

0.1

0.1

1

10

100 VDS(V)

Figure 12. Normalized gate threshold voltage vs

temperature

VGS(th)

(norm)

1.1

ID=250μA

AM18065v1

1.0

0.9

0.8

0.7

0.6

-75

25 0 25 75

125 TJ(°C)

0.6

0

0 100 200 300 400 500 600 VDS(V)

Figure 13. Normalized on-resistance vs

temperature

RDS(on)

(norm)

2.2

ID=2.5A

VGS=10V

AM18066v1

1.8

1.4

1.0

0.6

0.2

-75

-25 0 25

75 125 TJ(°C)

DocID026788 Rev 2

7/18

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