STM32F051R6T6(2012) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STM32F051R6T6
(Rev.:2012)
(Rev.:2012)
STMicroelectronics
STM32F051R6T6 Datasheet PDF : 104 Pages
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Electrical characteristics
STM32F051x
6.3.2
Operating conditions at power-up / power-down
The parameters given in Table 21 are derived from tests performed under the ambient
temperature condition summarized in Table 20.
Table 21. Operating conditions at power-up / power-down
Symbol
Parameter
Conditions
Min
Max
Unit
tVDD
tVDDA
VDD rise time rate
VDD fall time rate
VDDA rise time rate
VDDA fall time rate
0
∞
20
∞
µs/V
0
∞
20
∞
6.3.3
Embedded reset and power control block characteristics
The parameters given in Table 22 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 20.
Table 22. Embedded reset and power control block characteristics
Symbol
Parameter
Conditions
Min Typ Max Unit
VPOR/PDR(1)
Power on/power down
reset threshold
Falling edge
Rising edge
1.8(2) 1.88 1.96 V
1.84 1.92 2.0 V
VPDRhyst(1) PDR hysteresis
tRSTTEMPO(3) Reset temporization
-
40 - mV
1.5 2.5 4.5 ms
1. The PDR detector monitors VDD and also VDDA (if kept enabled in the option bytes). The POR detector
monitors only VDD.
2. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.
3. Guaranteed by design, not tested in production.
Table 23. Programmable voltage detector characteristics
Symbol
Parameter
Conditions Min(1) Typ Max(1) Unit
VPVD0
PVD threshold 0
Rising edge
Falling edge
2.1 2.18 2.26 V
2 2.08 2.16 V
VPVD1
PVD threshold 1
Rising edge 2.19 2.28 2.37 V
Falling edge 2.09 2.18 2.27 V
VPVD2
PVD threshold 2
Rising edge 2.28 2.38 2.48 V
Falling edge 2.18 2.28 2.38 V
VPVD3
PVD threshold 3
Rising edge 2.38 2.48 2.58 V
Falling edge 2.28 2.38 2.48 V
VPVD4
PVD threshold 4
Rising edge 2.47 2.58 2.69 V
Falling edge 2.37 2.48 2.59 V
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Doc ID 022265 Rev 3
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