STM32F051x
Electrical characteristics
Table 43. Flash memory characteristics
Symbol
Parameter
Conditions
tprog
tERASE
tME
IDD
16-bit programming time
Page (1 KB) erase time
Mass erase time
Supply current
TA = –40 to +105 °C
TA = –40 to +105 °C
TA = –40 to +105 °C
Write mode
Erase mode
Vprog Programming voltage
1. Guaranteed by design, not tested in production.
Min Typ Max(1) Unit
40 53.5 60
µs
20
-
40 ms
20
-
40 ms
-
-
10 mA
-
-
12 mA
2
-
3.6
V
Table 44. Flash memory endurance and data retention
Symbol
Parameter
Conditions
NEND Endurance
tRET Data retention
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
1 kcycle(2) at TA = 85 °C
1 kcycle(2) at TA = 105 °C
10 kcycles(2) at TA = 55 °C
1. Data based on characterization results, not tested in production.
2. Cycling performed over the whole temperature range.
Value
Min(1)
Unit
10
kcycles
30
10
Years
20
Doc ID 022265 Rev 3
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