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STM32F051C6U7 View Datasheet(PDF) - STMicroelectronics

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Description
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STM32F051C6U7 Datasheet PDF : 122 Pages
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Electrical characteristics
Table 48. I/O static characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
TC, FT and FTf I/O
TTa in digital mode
-
-
VSS ≤ VIN ≤ VDDIOx
Ilkg
Input leakage
current(2)
TTa in digital mode
VDDIOx ≤ VIN ≤ VDDA
-
-
TTa in analog mode
VSS ≤ VIN ≤ VDDA
-
-
FT and FTf I/O
VDDIOx ≤ VIN ≤ 5 V
-
-
Weak pull-up
RPU
equivalent resistor
(3)
VIN = VSS
25
40
Max
Unit
± 0.1
1
µA
± 0.2
10
55
kΩ
Weak pull-down
RPD
equivalent
resistor(3)
VIN = - VDDIOx
25
40
55
kΩ
CIO I/O pin capacitance
-
-
5
-
pF
1. Data based on design simulation only. Not tested in production.
2. The leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 47:
I/O current injection susceptibility.
3. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimal (~10% order).
All I/Os are CMOS- and TTL-compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in Figure 21 for standard I/Os, and in Figure 22 for
5 V-tolerant I/Os. The following curves are design simulation results, not tested in
production.
DocID022265 Rev 7
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