STM8S105K4T3(2015) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM8S105K4T3
(Rev.:2015)

Access line, 16 MHz STM8S 8-bit MCU, up to 32 Kbyte Flash, integrated EEPROM, 10-bit ADC, timers, UART, SPI, I²C

STMicroelectronics 

STM8S105x4/6

Electrical characteristics

1. Data obtained with HSI clock configuration, after applying the hardware recommendations described in

AN2860 (EMC guidelines for STM8S microcontrollers).

Electromagnetic interference (EMI)

Based on a simple application running on the product (toggling 2 LEDs through the I/O

ports), the product is monitored in terms of emission. This emission test is in line with the

norm IEC 61967-2 which specifies the board and the loading of each pin.

Table 48. EMI data

Conditions

Symbol

Parameter

General conditions

Monitored

frequency band

Max fHSE/fCPU(1) Unit

8 MHz/ 8 MHz/

8 MHz 16 MHz

SEMI

Peak level

EMI level

VDD 5 V, 

0.1 MHz to 30 MHz

13

TA 25 °C, 

30 MHz to 130 MHz 23

LQFP48 package.

Conforming to 

130 MHz to 1 GHz -4.0

IEC 61967-2

EMI level

2.0

14

19 dBµV

-4.0

1.5

-

1. Data based on characterization results, not tested in production.

Absolute maximum ratings (electrical sensitivity)

Based on two different tests (ESD, DLU and LU) using specific measurement methods, the

product is stressed to determine its performance in terms of electrical sensitivity. For more

details, refer to the application note AN1181.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts x (n+1) supply pin). One model

can be simulated: Human body model. This test conforms to the JESD22-A114A/A115A

standard. For more details, refer to the application note AN1181.

Table 49. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Maximum

Class value(1) Unit

VESD(HBM)

Electrostatic discharge voltage

(Human body model)

TA 25°C, conforming to

JESD22-A114

A

VESD(CDM)

Electrostatic discharge voltage

(Charge device model)

TA 25°C, conforming to

SD22-C101

IV

2000

V

1000

1. Data based on characterization results, not tested in production

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