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STM8S105S6U6 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STM8S105S6U6 Datasheet PDF : 127 Pages
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STM8S105xx
Electrical characteristics
Symbol Parameter
Conditions
Typ
Max(1) Unit
fADC = 4 MHz
|EL|
Integral linearity error(2)
fADC = 2 MHz
0.7
1
0.6
1.5
fADC = 4 MHz
0.6
1.5
(1) Data based on characterisation results for LQFP80 device with VREF+/VREF-, not tested
in production.
(2) ADC accuracy vs. negative injection current: Injecting negative current on any of the
analog input pins should be avoided as this significantly reduces the accuracy of the
conversion being performed on another analog input. It is recommended to add a Schottky
diode (pin to ground) to standard analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in I/O port
pin characteristics does not affect the ADC accuracy.
Figure 45: ADC accuracy characteristics
1. Example of an actual transfer curve.
2. The ideal transfer curve
3. End point correlation line
ET = Total unadjusted error: maximum deviation between the actual and the ideal transfer
curves.
EO = Offset error: deviation between the first actual transition and the first ideal one.
EG = Gain error: deviation between the last ideal transition and the last actual one.
ED = Differential linearity error: maximum deviation between actual steps and the ideal
one.
DocID14771 Rev 9
101/127

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