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STM8S105K6U3C View Datasheet(PDF) - STMicroelectronics

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STM8S105K6U3C Datasheet PDF : 127 Pages
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Electrical characteristics
STM8S105xx
10.3.12.4 Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the product
is stressed in order to determine its performance in terms of electrical sensitivity. For more
details, refer to the application note AN1181.
10.3.12.5 Electrostatic discharge (ESD)
Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are applied
to the pins of each sample according to each pin combination. The sample size depends on
the number of supply pins in the device (3 parts*(n+1) supply pin). This test conforms to the
JESD22-A114A/A115A standard. For more details, refer to the application note AN1181.
Table 50: ESD absolute maximum ratings
Symbol Ratings
Conditions
Class Maximum Unit
value(1)
VESD(HBM) Electrostatic discharge
TA = +25°C,
voltage (Human body model) conforming to
JESD22-A114
A 2000
V
VESD(CDM) Electrostatic discharge
voltage (Charge device
model)
TA=+25°C, conforming IV 1000
V
to JESD22-C101
(1) Data based on characterization results, not tested in production
10.3.12.6 Static latch-up
Two complementary static tests are required on 10 parts to assess the latch-up performance:
• A supply overvoltage (applied to each power supply pin)
• A current injection (applied to each input, output and configurable I/O pin) are performed
on each sample.
This test conforms to the EIA/JESD 78 IC latch-up standard. For more details, refer to the
application note AN1181.
Table 51: Electrical sensitivities
Symbol Parameter
Conditions
Class(1)
LU
Static latch-up class
TA = +25 °C
A
TA = +85 °C
A
TA = +125 °C
A
104/127
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