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STM8S105K6U3C View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STM8S105K6U3C Datasheet PDF : 127 Pages
First Prev 121 122 123 124 125 126 127
Revision history
Date
STM8S105xx
Revision Changes
Option bytes: added description of STM8L bootloader option
bytes to the option byte description table.
Added Unique ID
Operating conditions: added introductory text; removed low
power dissipation condition for TA, replaced "CEXT" by "VCAP",
and added ESR and ESL data in table "general operating
conditions".
Total current consumption in halt mode: replaced max value
of IDD(H) at 85 °C from 20 µA to 25 µA for the condition "Flash
in powerdown mode, HSI clock after wakeup in the table "total
current consumption in halt mode at VDD = 5 V.
Low power mode wakeup times: added first condition (0 to 16
MHz) for the tWU(WFI) parameter in the table "wakeup times".
Internal clock sources and timing characteristics: In the table
"HSI oscillator characteristics", replaced min and max values
of "ACCHSI factory calibrated parameter" and removed footnote
4 concerning further characterization of results.
Functional EMS (electromagnetic susceptibility): IEC 1000
replaced with IEC 61000.
Designing hardened software to avoid noise problems: IEC
1000 replaced with IEC 61000.
Electromagnetic interference (EMI): SAE J 1752/3 replaced
with IEC61967-2.
Thermal characteristics: Replaced the thermal resistance
junction ambient temperature of LQFP32 7X7 mm from 59 °C
to 60 °C in the thermal characteristics table.
Added 32-lead UFQFPN package mechanical data.
Added STM8S105 FASTROM microcontroller option list.
126/127
DocID14771 Rev 9

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