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STM8S105K6U3C View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STM8S105K6U3C Datasheet PDF : 127 Pages
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STM8S105xx
Electrical characteristics
Symbol
Ratings
IINJ(PIN) (4) (5) Injected current on NRST pin
Max.(1) Unit
±4
Injected current on OSCIN pin
±4
Injected current on any other pin(6)
±4
ΣIINJ(PIN) (4) Total injected current (sum of all I/O and control pins)(6) ±20
(1) Data based on characterization results, not tested in production.
(2) All power (VDD, VDDIO, VDDA) and ground (VSS, VSSIO, VSSA) pins must always be
connected to the external supply.
(3) I/O pins used simultaneously for high current source/sink must be uniformly spaced
around the package between the VDDIO/VSSIO pins.
(4) IINJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected.
If VIN maximum cannot be respected, the injection current must be limited externally to the
IINJ(PIN) value. A positive injection is induced by VIN>VDD while a negative injection is induced
by VIN<VSS. For true open-drain pads, there is no positive injection current, and the
corresponding VIN maximum must always be respected
(5) Negative injection disturbs the analog performance of the device. See note in I2C interface
characteristics.
(6) When several inputs are submitted to a current injection, the maximum ΣIINJ(PIN) is the
absolute sum of the positive and negative injected currents (instantaneous values). These
results are based on characterization with ΣIINJ(PIN) maximum current injection on four I/O
port pins of the device.
Symbol
TSTG
TJ
Table 18: Thermal characteristics
Ratings
Value
Unit
Storage temperature range
-65 to 150
°C
Maximum junction temperature
150
10.3
Operating conditions
The device must be used in operating conditions that respect the parameters in the table
below. In addition, full account must be taken of all physical capacitor characteristics and
tolerances.
DocID14771 Rev 9
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