STM8S105K6U3C View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM8S105K6U3C

Access line, 16 MHz STM8S 8-bit MCU, up to 32 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, UART, SPI, I²C

STMicroelectronics 

Electrical characteristics

STM8S105xx

Symbol Parameter

Conditions

Fast programming time for 1 block

(128 bytes)

Min(1) Typ Max Unit

3 3.3 ms

terase Erase time for 1 block (128 bytes)

NRW

Erase/write cycles(2)(program

memory)

TA = +85 °C

Erase/write cycles(data memory)(2) TA = +125 ° C

tRET Data retention (program memory) TRET = 55° C

after 10k erase/write cycles at TA

= +85 °C

3 3.3 ms

10 k

cycles

300 k 1M

20

years

Data retention (data memory) after TRET = 55° C

20

10k erase/write cycles at TA = +85

°C

Data retention (data memory) after TRET = 85° C

1

300 k erase/write cyclesat TA =

+125 °C

IDD

Supply current (Flash

programming or erasing for 1 to

128 bytes)

2

mA

(1) Data based on characterization results, not tested in production.

(2) The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes

even when a write/erase operation addresses a single byte.

10.3.6

I/O port pin characteristics

General characteristics

Subject to general operating conditions for VDD and TA unless otherwise specified. All unused

pins must be kept at a fixed voltage: using the output mode of the I/O for example or an

external pull-up or pull-down resistor.

Table 38: I/O static characteristics

Symbol Parameter

Conditions

Min Typ Max

Unit

VIL

Input low level

VDD = 5 V

voltage

-0.3

0.3 x VDD V

82/127

DocID14771 Rev 9

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