STP5NK100Z View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP5NK100Z
STMicroelectronics
STP5NK100Z Datasheet PDF : 15 Pages
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Electrical characteristics
STP5NK100Z, STF5NK100Z, STW5NK100Z
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,
Tc = 125 °C
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VGS = 0)
VGS = ± 20 V
Gate threshold voltage
VDS = VGS, ID = 100 µA
Static drain-source on
resistance
VGS = 10 V, ID = 1.75 A
Min. Typ. Max. Unit
1000
V
1
µA
50 µA
±10 µA
3 3.75 4.5 V
2.7 3.7 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS =15 V, ID = 1.75 A
-
4
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz,
VGS=0
1154
- 106
21.3
pF
pF
pF
Cosseq(2)
Equivalent output
capacitance
VGS=0, VDS =0 V to 800 V
-
46.8
pF
td(on)
tr
td(off)
Turn-on delay time
Rise time
Off-voltage rise time
VDD=500 V, ID= 1.75 A,
RG=4.7 Ω, VGS=10 V
(see Figure 21)
22.5
7.7
-
51.5
ns
ns
ns
tf
Fall time
19
ns
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=800 V, ID = 3.5 A
VGS =10 V
(see Figure 22)
42 59 nC
-
7.3
nC
21.7
nC
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/15
Doc ID 10850 Rev 5
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